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Thick Amorphous Silicon Layers Suitable for the Realization of Radiation Detectors

Published online by Cambridge University Press:  15 February 2011

W. S. Hong ,
V. Petrova-Koch ,
J. Drewery ,
T. Jing ,
H. Lee  and
V. Perez-Mendez
W. S. Hong
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
V. Petrova-Koch
Affiliation:
Technische Universität Munich, 85747 Garching, Germany
J. Drewery
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
T. Jing
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
H. Lee
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
V. Perez-Mendez
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A
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Abstract

Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH4 at a substrate temperature ∼150°C and subsequent annealing at 160°C for about 100 hours. The stress in the films obtained this way decreased to ∼100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 × 1015 cm−3 to 7 × 1014 cm−3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 773
Copyright
Copyright © Materials Research Society 1995

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References

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