Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T06:29:03.258Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric Power Devices Based on InN Thin Films

Published online by Cambridge University Press:  26 February 2011

Takayuki Matsumoto ,
Shigeo Yamaguchi  and
Atsushi Yamamoto
Takayuki Matsumoto
Affiliation:
r200570100@kanagawa-u.ac.jp, Kanagawa University, Engineering, 3-27-1 Rokkakubashi Kanagawa-ku Yokohama, Yokohama, 221-8686, Japan
Shigeo Yamaguchi
Affiliation:
yamags18@kanagawa-u.ac.jp, Kanagawa University, Yokohama, 221-8686, Japan
Atsushi Yamamoto
Affiliation:
yamags18@kanagawa-u.ac.jp, AIST, Tsukuba, 305-8568, Japan
Get access

Abstract

We have studied the temperature dependence of thermoelectric properties of amorphous InN thin films prepared by reactive radio-frequency sputtering. We fabricated 60-pair and 120-pair InN-chromel films, which were deposited on polyimide films. For the 120-pair device, the maximum open output voltage and the maximum output power were 210 mV and 65 nW, respectively, at temperature difference of 168 K.

Keywords

thermoelectricitynitridesputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 973: Symposium BB – Mobile Energy , 2006 , 0973-BB04-09
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamaguchi, S., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. 82, 2065 (2003).Google Scholar
2. Yamaguchi, S., Izaki, R., Yamagiwa, K., Taki, K., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. 83, 5398 (2003).Google Scholar
3. Izaki, R., Kaiwa, N., Hoshino, M., and Yaginuma, T., Yamaguchi, S., and Yamamoto, A., Appl. Phys. Lett. 87, 243508 (2005).Google Scholar
4. Fritzshe, H. and Pollak, M., ed., HOPPING AND RELATED PHENOMENA, in Advances in Disordered Semiconductors-vol. 2, World Scientific Publishing, Singapore, 1990.Google Scholar