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A Thermodynamic Model for the Hydrogen Incorporation in PECVD Silicon Oxynitrides Thin Layers

Published online by Cambridge University Press:  22 February 2011

Y. Cros ,
S. Viscaïno ,
W. M. Arnold Bik  and
F. H. P. M. Habraken
Y. Cros
Affiliation:
L.E.P.E.S., C.N.R.S., Associeé a l'Universiteé J. Fourier, 166X, 38042 Grenoble Cedex - France.
S. Viscaïno
Affiliation:
L.E.P.E.S., C.N.R.S., Associeé a l'Universiteé J. Fourier, 166X, 38042 Grenoble Cedex - France.
W. M. Arnold Bik
Affiliation:
Department of Atomic and Interface Physics, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands
F. H. P. M. Habraken
Affiliation:
Department of Atomic and Interface Physics, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands
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Abstract

In the PECVD SixNyHzOw the hydrogen is principally incorporated as N-H bonds. For O/(O+N) below 0.4, the %H is constant at 25%; from 0.4 to 1, it decreases to 4%. We show that a chemical ordered model is likely to describe the hydrogen incorporation in the amorphous network while a random bond model fails.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 363
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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