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Thermal Stress Induced Void Formation in Narrow Passivated Cu Lines

Published online by Cambridge University Press:  22 February 2011

D. D. Brown ,
P. Børgesen ,
D. A. Lilienfeld ,
M. A. Korhonen  and
C.-Y. Li
D. D. Brown
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
P. Børgesen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
D. A. Lilienfeld
Affiliation:
National Nanofabrication Facility, Cornell University, Ithaca, New York 14853
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering, Cornell University, Ithaca, NY 14853
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Abstract

0.75–3 μm wide copper lines encased in a thin adhesion layer of Al or Cr were passivated at 300°C and annealed at 400°C. The passivation was then removed and the lines examined in a scanning electron microscope. The development of thermal stress induced voiding was found to depend primarily on aging conditions and adhesion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 701
Copyright
Copyright © Materials Research Society 1992

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References

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