Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T14:22:27.358Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability of TiSi2 on High Dose Ion Implanted Silicon

Published online by Cambridge University Press:  21 February 2011

J.F. Chen ,
L.J. Chen  and
W. Lur
J.F. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of, China
W. Lur
Affiliation:
United Microelectronics Corporation, Science–Based Park, Hsinchu, Taiwan, Republic of, China
Get access

Abstract

Thermal stability of TiSi2 on blank, high–dose BF2+–, B+–, F+–, As+–, and P+–implanted silicon has been studied by both cross–sectional and plan–view transmission electron microscopy as well as by sheet resistance measurements. The surface morphology of TiSi2 was found to be significantly influenced by the implantation in silicon substrate.

Simultaneous presence of B and F was found to be most effective in stabilizing the TiSi2 thin films. Sheet resistance data were found to correlate well with the morphological and microstructural observation. The mechanisms for the stabilization of silicide films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 57
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ting, C.Y., d'Heurle, F.M., Iyer, S.S., and Fryer, P.M., J. Electrochem. Soc. 133, 2621 (1986).CrossRefGoogle Scholar
2 Revesz, P., Zheng, L.R., Hung, L.S., and Mayer, J.W., Appl. Phys. Letts. 48, 1591 (1986).Google Scholar
3 Wong, C.Y., Wang, L.K., McFarland, P.A., and Ting, C.Y., J. Appl. Phys. 60, 243 (1986).Google Scholar
4 Wong, C.Y., Lai, F.S., Mcfarland, P.A., d'Heurle, F.M., and Ting, C.Y., J. Appl. Phys. 59, 2773 (1986).Google Scholar
5 Osburn, C. M., J.Electron. Mater. 19, 67 (1990).Google Scholar
6 Lur, W.. and Chen, L. J., J. Appl. Phys. 66, 3604 (1989).Google Scholar
7 Fung, M.S., Cheng, H.C., and Chen, L.J., Appl. Phys. Lett. 47, 1312 (1985).Google Scholar
8 Wu, I.C., Chu, J.J., and Chen, L.J., J. Appl. Phys. 62, 879 (1987).Google Scholar
9 Xiao, Z. G., Rozgnyi, G. A., H.Jiang, Honeycutt, J., Osburn, C M, and McGuire, G., Electrochemical Society Extended Abstracts (Electrochemical Society, Penmngton, NJ, 1990), Vol 90–1, P. 258.Google Scholar
10 Jeon, H., Nemanich, R. J., Honeycutt, J. W., and Rozgonyi, G.A., Mater. Res. Soc. Symp. Proc. 160, 307 (1990).Google Scholar