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Texture and Microstructure Effects on Electromigration Behavior of Aluminum Metallization

Published online by Cambridge University Press:  15 February 2011

D. B. Knorr
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
K. P. Rodbell
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
D. P. Tracy
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

Pure aluminum films are deposited under a variety of conditions to vary the crystallographic texture. After patterning and annealing at 400°C for 1 hour, electromigration tests are performed at several temperatures. Failure data are compared on the basis of t50 and standard deviation. Microstructure is quantified by transmission electron microscopy for grain size and grain size distribution and by X-ray diffraction for texture. A strong (111) texture significantly improves the electromigration lifetime and decreases the standard deviation in time to failure. This improvement correlates with both the fraction and sharpness of the (111) texture component.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Black, J.R., in Proceedings of 6th Reliability Physics Symposium, (IEEE, New York, 1968), p. 148.Google Scholar
2. Learn, A.J., Appl. Phys. Lett., 19, 292 (1971).Google Scholar
3. Kwok, T., in Proceedings of the 4th International VLSI Multilevel Interconnection Conference, (IEEE, New York, 1987), pp. 45 6–462.Google Scholar
4. Cho, J. and Thompson, C.V., Appl. Phys. Lett., 54, 2577 (1989).Google Scholar
5. Thompson, C.V., Ann. Rev. Mater. Sci., 20, 245 (1990).Google Scholar
6. Vaidya, S., Sheng, T.T., and Sinha, A.K., Appl. Phys. Lett., 36, 464 (1980).Google Scholar
7. Attardo, M.J. and Rosenberg, R., J. Appl. Phys., 41, 2381 (1970).Google Scholar
8. Agarwala, B.N., Patnaik, B., and Schmitzel, R., J. Appl. Phys., 43, 1487 (1972).Google Scholar
9. Nagasawa, E., Okabayashi, H., Nozaki, T., and Nikawa, K., in Proceedings of the 17th Reliability Physics Symposium, (IEEE, New York, 1979), pp.64–71.Google Scholar
10. Li, P., Yapsir, A.S., Rajan, K., and Lu, T.-M., Appl. Phys. Lett., 54, 2443 (1989).Google Scholar
11. Vaidya, S. and Sinha, A.K., Thin Solid Films, 75, 253 (1981).Google Scholar
12. Mei, S.-N. and Lu, T.-M., J. Vac. Sci. Tech., A6, 9 (1988).Google Scholar
13. Knorr, D.B., Tracy, D.P., and Lu, T.-M., to be published in Proceedings, 9th International Conference on Textures of Materials, Avignon, France, 1990.Google Scholar
14. Knorr, D.B., Tracy, D.P., and Lu, T.-M., presented MRS Fall Meeting, November 1990, Boston, MA, to be published.Google Scholar
15. Knorr, D.B. and Lu, T.-M., Appl. Phys. Lett., 54, 2210 (1989).Google Scholar