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Terahertz Detectors Based on Silicon Technology Field Effect Transistors

Published online by Cambridge University Press:  15 June 2012

Wojciech Knap ,
Franz Schuster ,
Dominique Coquillat ,
Frédéric Teppe ,
Benoît Giffard ,
Dmytro B. But ,
Oleksander G. Golenkov  and
Fedor F. Sizov
Wojciech Knap
Affiliation:
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France
Franz Schuster
Affiliation:
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France CEA-LETI, MINATEC Campus, 38054 Grenoble, France
Dominique Coquillat
Affiliation:
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France
Frédéric Teppe
Affiliation:
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France
Benoît Giffard
Affiliation:
CEA-LETI, MINATEC Campus, 38054 Grenoble, France
Dmytro B. But
Affiliation:
Université Montpellier 2 and CNRS, TERALAB-GIS, L2C UMR 5221, 34095 Montpellier, France Institute of Semiconductor Physics, 41 Nauki Ave., 03028 Kiev, Ukraine
Oleksander G. Golenkov
Affiliation:
Institute of Semiconductor Physics, 41 Nauki Ave., 03028 Kiev, Ukraine
Fedor F. Sizov
Affiliation:
Institute of Semiconductor Physics, 41 Nauki Ave., 03028 Kiev, Ukraine
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Abstract

The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging.

Keywords

microstructureSidevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1437: Symposium L – Group IV Photonics for Sensing and Imaging , 2012 , mrss12-1437-l07-04
Copyright
Copyright © Materials Research Society 2012

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References

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