Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T07:53:57.268Z Has data issue: false hasContentIssue false

Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure

Published online by Cambridge University Press:  10 February 2011

S. Guha
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, U.S.A.
Q. Cai
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, U.S.A.
M. Chandrasekhar
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, U.S.A.
H. R. Chandrasekhar
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, U.S.A.
Hyunjung Kim
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
A. D. Alvarenga
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
R. Vogelgesang
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
A. K. Ramdas
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47907, U.S.A.
M. R. Melloch
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A
Get access

Abstract

We have studied the pressure dependence of the type-I and type-II transitions in (GaAs)m/(AlAs)m superlattices by photoluminescence (PL) spectroscopy. From the study of PL linewidths of the type-I exciton as a function of pressure and temperature, we determine the intervalley deformation potential. Beyond the type-I and type-II crossover, the PL linewidth increases both as a function of pressure and temperature. We find that the electron-phonon deformation potential for Γ-X intervalley scattering varies with temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For a review see Wilson, B.A., IEEE J. Quant. Electronics, 24, 1763 (1988).Google Scholar
2. See for example, Adachi, S., GaAs and related materials: Bulk Semiconducting and Superlattice Properties, World Scientific, Singapore 1994.Google Scholar
3. Jayaraman, A., Rev. Mod. Phys. 55, 65 (1983).Google Scholar
4. Chandrasekhar, M. and Chandrasekhar, H.R., J. High Pressure Res. 9, 57 (1992).Google Scholar
5. Chandrasekhar, M. and Chandrasekhar, H.R., Phil. Mag. B70, 369 (1994).Google Scholar
6. Chandrasekhar, H.R. and Chandrasekhar, M., in Bandgap tuning in Semiconductors and Heterostructures. Encyclopedia of Electronics and Electrical Engineering, ed Webster, J.G., John Wiley & Sons, (to be published).Google Scholar
7. Holtz, M., Cingolani, R., Reimann, K., Syassen, K. and Ploog, K., Phys. Rev. B41, 3641 (1990).Google Scholar
8. Holtz, M., Syassen, K., Muralidharan, R. and Ploog, K., Phys. Rev. B41, 7647 (1990).Google Scholar
9. Satpathy, S., Chandrasekhar, M., Chandrasekhar, H.R. and Venkateswaran, U., Phys. Rev. B44, 11339 (1991).Google Scholar
10. Zollner, S., Gopalan, S. and Cardona, M., Appl. Phys. Lett. 54, 614 (1989); J. Appl. Phys. 68, 1682 (1990); Solid State Commun. 76, 877 (1990).Google Scholar
11. Goni, A.R., Cantarero, A., Syassen, K., and Cardona, M., Phys. Rev. B 41, 10111 (1990)Google Scholar
12. Zollner, S., Gopalan, S., and Cardona, M., J. Appl. Phys. 68, 1682(1990).Google Scholar
13. Zollner, S., Gopalan, S., and Cardona, M., Solid State Commun. 76, 877 (1990).Google Scholar