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Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

Published online by Cambridge University Press:  15 June 2012

Francisco Temoltzi Avila ,
Andrey Kosarev ,
Ismael Cosme ,
Mario Moreno  and
P. Roca y Cabarrocas
Francisco Temoltzi Avila
Affiliation:
Electronics, National Institute of Astrophysics, Optics, and Electronics, Puebla, 72840, Mexico.
Andrey Kosarev
Affiliation:
Electronics, National Institute of Astrophysics, Optics, and Electronics, Puebla, 72840, Mexico.
Ismael Cosme
Affiliation:
Electronics, National Institute of Astrophysics, Optics, and Electronics, Puebla, 72840, Mexico.
Mario Moreno
Affiliation:
Electronics, National Institute of Astrophysics, Optics, and Electronics, Puebla, 72840, Mexico. Electronics, Ecole Polytechnique, Palaiseau, France.
P. Roca y Cabarrocas
Affiliation:
Electronics, Ecole Polytechnique, Palaiseau, France.
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Abstract

The dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Keywords

electrical propertiesphotovoltaicthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 365 - 370
Copyright
Copyright © Materials Research Society 2012

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References

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