No CrossRef data available.
Article contents
Tem Study of Porous Silicon Fabricated from N- and P-Type Doped Polycrystalline Films
Published online by Cambridge University Press: 15 February 2011
Abstract
The formation of porous silicon (PS) from n/p, n+/p and p+/n structures carried from polycrystalline silicon films (poly-Si) deposited on single crystal silicon (c-Si) substrates was studied by cross-sectional transmission electron microscopy. Our results clearly show that the pore formation in such structures involve the extended defects of the poly-Si film. The role played by these defects depends on the doping type and level, and on whether the anodization is performed under illumination or not.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997