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Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN

Published online by Cambridge University Press:  15 February 2011

S. Ruvimov ,
Z. Liliental-Weber ,
J. Washburn ,
K. J. Duxstad ,
E. E. Hailer ,
Z.-F. Fan ,
S. N. Mohammad ,
W. Kim ,
A. E. Botchkarev  and
H. Morkoq
S. Ruvimov
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, MS 62-203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, MS 62-203, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, MS 62-203, Berkeley, CA 94720
K. J. Duxstad
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. E. Hailer
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z.-F. Fan
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61810
S. N. Mohammad
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61810
W. Kim
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61810
A. E. Botchkarev
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61810
H. Morkoq
Affiliation:
Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61810
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Abstract

Transmission electron microscopy has been applied to characterize the structure of Ti/Al and Ti/Al/Ni/Au ohmic contacts on n-type GaN (˜1017 cm−3 ) epitaxial layers. A thin polycrystalline cubic TiN layer epitaxially matched to the (0001) GaN surface was detected at the interface with the GaN substrate. This layer was studied in detail by electron diffraction and high resolution electron microscopy. The orientation relationship between the cubic TiN and the GaN was found to be: {111}TiN//{00.1}GaN, [110]TiN//[11.0]GaN, [112 ]TiN//[ 10.0]GaN. The formation of this cubic TiN layer results in an excess of N vacancies in the GaN close to the interface which is considered to be the reason for the low resistance of the contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 201
Copyright
Copyright © Materials Research Society 1996

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