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Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers

Published online by Cambridge University Press:  28 February 2011

T. Soga ,
H. Nishikawa ,
T. Jimbo  and
M. Umeno
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Nishikawa
Affiliation:
Department of Physics, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

GaAs was grown on Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and SLS, but does not decrease in the SLS. When GaAs/GaAsP SLS is used as the intermediate layer, a part of the dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch-pit-density of (3-5) x 105 cm−2 was obtained by using the intermediate layer of GaAs/GaAsP SLS and AlAs/GaAs superlattice with thermal-cycle annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 201
Copyright
Copyright © Materials Research Society 1990

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