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TEM Analysis of Microstructures of AlN/sapphire grown by MOCVD

Published online by Cambridge University Press:  31 January 2011

Bo Cai  and
Mim L Nakarmi
Bo Cai
Affiliation:
bcai@brooklyn.cuny.edu, Brooklyn College, Physics, Brooklyn, New York, United States
Mim L Nakarmi
Affiliation:
mlnakarmi@brooklyn.cuny.edu, Brooklyn college, Physics, Brooklyn, New York, United States
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Abstract

We report on microstructure analysis of aluminum nitride (AlN) epilayers by transmission electron microscopy (TEM). AlN epilayer samples were grown on sapphire substrates by metal organic chemical vapor deposition. Cross section and plan view images were taken by TEM to investigate the threading dislocations. Edge type threading dislocations dominate the total dislocation density. The threading dislocations are greatly reduced by inserting an intermediate layer prior to the growth of high temperature AlN epilayer. The dislocations further reduce with increasing thickness. Our results correlate with the dislocation density estimated from x-ray diffraction analysis.

Keywords

dislocationstransmission electron microscopy (TEM)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-01
Copyright
Copyright © Materials Research Society 2010

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