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Synthesis of Nickel Disilicide Nanocrystal Monolayers for Nonvolatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Jong-Hwan Yoon  and
Robert G. Elliman
Jong-Hwan Yoon
Affiliation:
jhyoon@kangwon.ac.kr, Kangwon National University, Department of Physics, 192-1 Hyoja-dong, Chuncheon, 200-701, Korea, Republic of, +82-33-250-8466, +82-33-257-9689
Robert G. Elliman
Affiliation:
rob.elliman@anu.edu.au, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Canberra, ACT, 0200, Australia
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Abstract

Nickel silicide nanocrystals (NCs) were formed by thermally annealing SiOxNy films either implanted with Ni or coated with an evaporated Ni film. It is observed that the NCs grow into well-defined single crystalline structures embedded in a SiOxNy matrix, and that their size can be directly controlled by adjusting the concentrations of either silicon or nickel in the SiOxNy layer. The formation of well-defined NC monolayers was also demonstrated by depositing an ultra-thin Ni layer between two SiOxNy layers. These structures are shown to exhibit characteristic capacitance-voltage hysteresis suitable for nonvolatile memory applications.

Keywords

Ninanostructurenucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1071: Symposium F – Materials Science and Technology for Nonvolatile Memories , 2008 , 1071-F03-16
Copyright
Copyright © Materials Research Society 2008

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References

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