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Synthesis of Model Alumina Slurries for Damascene Patterning of Copper

Published online by Cambridge University Press:  18 March 2011

Byung-Chan Lee ,
David J. Duquette  and
Ronald J. Gutmann
Byung-Chan Lee
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
David J. Duquette
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
Ronald J. Gutmann
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute Troy, NY 12180, U.S.A.
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Abstract

Model alumina slurries for chemical-mechanical planarization (CMP) of copper have been studied using fundamental electrochemical concepts together with modification of surface tension and zeta-potential. A model slurry was established containing 3 wt% alumina (50 nm nominal size), 2 wt% potassium dichromate (K2Cr2O7) and 1 vol % DOWFAX, as abrasive, oxidizer and anionic surfactant, respectively, which resulted in blanket copper removal rates of 130 nm/min with smooth, low-particulate defect density surfaces without aggressive post-CMP cleaning. When used with a model silica-abrasive slurry to remove the Ta liner, well-defined damascene-patterned structures were achieved with low-particulate defect densities.

Open circuit potential measurement, potentiodynamic polarization, surface tension measurement, and zeta-potential measurement were used in developing the model slurries. The variations obtained with alternative abrasives, alternative oxidizers and alternative surfactants illustrate the principles of synthesizing slurries for Cu and Ta.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M2.7
Copyright
Copyright © Materials Research Society 2001

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References

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