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Surface Reconstruction of MBE-Grown GeXSi1−x on Si(111)

Published online by Cambridge University Press:  26 February 2011

C. F. Huang ,
R. P. G. Karunasiri ,
J. S. Park ,
K. L. Wang  and
T. W. Kang
C. F. Huang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024–1600
R. P. G. Karunasiri
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024–1600
J. S. Park
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024–1600
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024–1600
T. W. Kang
Affiliation:
T.W. Kang was on leave from Dongguk University, Korea.
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Abstract

Surface reconstruction during the molecular beam epitaxy (MBE) growth of GexSi1−x ( x = 0.2 - 1.0 ) film on Si(111) was studied using reflection high energy electron diffraction (RHEED). A series of reconstruction pattern transitions was observed due to the formation of strain layer and its relaxation. The critical thickness obtained using the thickness of the GexSil-x film at the transition of the reconstruction pattern agrees well with the previously reported values. The strain dependence of RHEED patterns for GexSi1−x film was substantiated by Raman scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 425
Copyright
Copyright © Materials Research Society 1988

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References

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