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Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes
Published online by Cambridge University Press: 21 March 2011
Abstract
InGaN/GaN/AlGaN multiple quantum well light emitting diodes (MWQ LED's) with different levels of p-doping in the contact layer have been characterized using surface photovoltage spectroscopy (SPS). Due to the high sensitivity of the SPS technique to the electric field, there is a strong correlation between the p-doping level in the contact layer and the magnitude of the SPS signal originating from the MQW region. The experimental results are confirmed by a numerical simulation.
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- Copyright © Materials Research Society 2001
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