Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T14:20:22.598Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Nucleation and Template Growth of Ti Silicides

Published online by Cambridge University Press:  15 February 2011

R. T. Tung
R. T. Tung*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974
Get access

Abstract

The direct nucleation and growth of Ti silicide on the surfaces of Si(100) and amorphous Si were studied. Silicide phase formation depended on the temperature and the stoichiometry of deposition and the crystallinity of the substrate. A very low temperature, − 500°C, for the nucleation of the low-resistivity C54-TiSi2 phase was observed on amorphous Si. Stoichiometric and uniform TiSi2 layers were grown with the depositions of pure Ti. On crystalline Si, uniform TiSi2 layers were also grown at ∼ 500°C with a co-deposited template layer. The much reduced C54 formation temperature is discussed in terms of a possible circumvention of precursor amorphous silicide phases during surface nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 101
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maex, K., Mat. Sci. Eng. Rep. R11, 53 (1993).Google Scholar
2. Lasky, J. B., Nakos, J. S., Cain, O. J., and Geiss, P. J., IEEE Trans. Electron Dev. ED–38, 262 (1991).Google Scholar
3. Fujii, K., Kikuta, K., and Kikkawa, T., VLSI Symp. Dig. 57 (1995).Google Scholar
4. Li, X.-H., Carlsson, J. R. A., Gong, S. F., and Hentzell, H. T. G., J. Appl. Phys. 72, 514 (1992).Google Scholar
5. Clevenger, L. A., Mann, R. W., Miles, G. L., Harper, J. M. E., d'Heurle, F. M., Cabral, C. Jr, Saenger, K. L., Knotts, T. A., and Rakowski, D. W., Proc. 1995 VMIC p. 626.Google Scholar
6. Holloway, K. and Sinclair, R., J. Appl. Phys. 61, 1359 (1987).Google Scholar
7. Ma, Z., Xu, Y., Allen, L. H., and Lee, S., J. Appl. Phys. 74, 2954 (1993).Google Scholar
8. Clevenger, L. A., Harper, J. M. E., Cabral, C. Jr, Nobili, C., Ottaviani, G., Mann, R., J. Appl. Phys. 72, 4978 (1992).Google Scholar
9. Gong, S. F., Robertsson, A., Hentzell, H. T. G., and Li, X.-H., J. Appl. Phys. 68, 4535 (1990).Google Scholar
10. Jeon, H., Sukow, C. A., Honeycutt, J. W., Rozgonyi, G., and Nemanich, R. J., J. Appl. Phys. 71, 4269 (1992).Google Scholar
11. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).Google Scholar