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Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates

Published online by Cambridge University Press:  17 March 2011

Morgan E. Ware  and
Robert J. Nemanich
Morgan E. Ware
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695-8202, U.S.A
Robert J. Nemanich
Affiliation:
North Carolina State University, Physics Department, Raleigh, NC 27695-8202, U.S.A
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Abstract

The 4% lattice mismatch between Si and Ge creates strain in epitaxial layers of SiGe alloys on Si, and this strain can manifest itself in the morphological structure of the surface of the epitaxial layer. This study explores the relationship of the evolution of the surface morphology of SiGe layers grown on a range of Si surface orientations. We have grown thin, strained and thick, relaxed layers of Si0.7Ge0.3 by solid source molecular beam epitaxy on substrates with surface normals rotated from [001] towards [111] by angles of θ = (0, 2, 4, 10, 22) degrees. The surface morphology was investigated by atomic force microscopy, which showed considerable ordering of surface features on relaxed samples. These features evolve from hut-like structures at 0 degrees to large mesa-like structures separated by pits and crevices at 22 degrees. The organization of these features is also shown to vary with the substrate orientation. Each surface has characteristic directions along which features are aligned, and these directions vary continuously with the angle of rotation of the substrate. Transmission electron microscopy confirmed that misfit dislocations had formed along those same directions. The state of relaxation of each layer is quantified by Raman spectroscopy in order to make a direct correlation between residual strain and surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P10.8
Copyright
Copyright © Materials Research Society 2001

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