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Surface Faceting of (110) GaAs: Analysis and Elimination

Published online by Cambridge University Press:  26 February 2011

L. Parechanian-Allen ,
E.R. Weber ,
J. Washburn  and
Y.C. Pao
L. Parechanian-Allen
Affiliation:
Dept. of Materials Science, Univ. of Calif., Berkeley, Ca. 94720 Materials and Molecular Research Division, Lawrence, Berkeley Laboratory, Berkeley, Ca. 94720
E.R. Weber
Affiliation:
Dept. of Materials Science, Univ. of Calif., Berkeley, Ca. 94720
J. Washburn
Affiliation:
Materials and Molecular Research Division, Lawrence, Berkeley Laboratory, Berkeley, Ca. 94720
Y.C. Pao
Affiliation:
Varian Associates, Microwave Division, Santa Clara, Ca.
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Abstract

A systematic study has been made on (110) GaAs grown by molecular beam epitaxy. This work represents the first systematic investigation of commonly observed faceting on the (110) GaAs surface which has led to the consistent elimination of the defects. This study involved the analysis of facet geometry, a kinetic model of initial facet formation, and the electrical and optical analysis of facet free (110) GaAs. The latter was obtained with proper growth conditions and a Ga rich surface exposure from a GaAs substrate angled 6° toward (111)Ga.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 487
Copyright
Copyright © Materials Research Society 1987

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References

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