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Surface and Microstructural Characterization of Homoepitaxial Silicon Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

J.S. Pelt ,
R. Magahñ;a Jr ,
M.E. Ramsey ,
E. Poindexter ,
S. Atwell ,
J.P. Zheng ,
S.M. Durbin  and
M. Kobayashi
J.S. Pelt
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
R. Magahñ;a Jr
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
M.E. Ramsey
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
E. Poindexter
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
S. Atwell
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
J.P. Zheng
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
S.M. Durbin
Affiliation:
Department of Electrical Engineering, Florida A&M University and The Florida State University Tallahassee, Florida 32310
M. Kobayashi
Affiliation:
Kagami Memorial Laboratory for Materials Research and Technology, Waseda University 2-8-26 Nishiwaseda, Sinjuku Tokyo 169-0051, Japan
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Abstract

There is a great deal of interest in thin film deposition techniques which can achieve good crystal quality at low substrate temperatures. Pulsed laser deposition (PLD), well-known as a reliable technique for fabrication of high critical temperature superconductor thin films, has a number of characteristics which may make it suitable for such applications. In particular, PLD is characterized by a relatively large average species energy, which can be controlled by the laser fluence at the target. This paper describes the growth of silicon on silicon films using PLD over substrate temperatures between 500 and 700 °C, and in-situ characterization using reflection high-energy electron diffraction (RHEED). Transmission electron microscopy confirms the growth of single crystal oriented films, and atomic force microscopy indicates smooth films with an rms surface roughness of less than 2 Å

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 75
Copyright
Copyright © Materials Research Society 2000

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