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Surface Acoustic Waves And Guided Optical Waves In AlGaN Films

Published online by Cambridge University Press:  01 February 2011

Gang Bu ,
Daumantas Ciplys ,
Michael Shur ,
Remis Gaska ,
Qhalid Fareed ,
Romualdas Rimeika ,
Jinwei Yang  and
Asif Khan
Gang Bu
Affiliation:
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Daumantas Ciplys
Affiliation:
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. Department of Radiophysics, Vilnius University, Vilnius 2040, Lithuania
Michael Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Remis Gaska
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.
Qhalid Fareed
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.
Romualdas Rimeika
Affiliation:
Department of Radiophysics, Vilnius University, Vilnius 2040, Lithuania
Jinwei Yang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia 29208, U.S.A.
Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia 29208, U.S.A.
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Abstract

AlxGa1-xN layers grown by MOCVD on sapphire substrates have been tested using the surface acoustic wave and guided optical wave techniques. Samples with molar fraction of Al up to 0.36 have been investigated. The parameters S11 of single surface acoustic wave transducers and S12 of two-port devices have been measured with the network analyzer. The values of the surface acoustic wave velocity and electromechanical coupling coefficient for the layer-substrate structure have been extracted and calculated using material parameters available from literature. The attenuation of guided optical waves along the propagation track in AlxGa1-xN layers has been measured using the CCD imaging technique. The attenuation dependence on the mode order and layer thickness has been studied. Our results show that the properties of AlxGa1-xN that determine surface acoustic wave and guided optical wave propagation are similar to the properties of GaN films within a relatively wide range of x up to x =0.36.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C6.10
Copyright
Copyright © Materials Research Society 2003

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References

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