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A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD

Published online by Cambridge University Press:  26 February 2011

Richard Potter
Affiliation:
rjpott@liv.ac.uk, University of Liverpool, Engineering, George Holt Building,, Liverpool, Merseyside, L69 3BX, United Kingdom
Ahmed Awad
Affiliation:
aawad@liv.ac.uk, University of Liverpool, Engineering, United Kingdom
Paul R. Chalker
Affiliation:
pchalker@liverpool.ac.uk, University of Liverpool, Engineering, United Kingdom
Peng Wang
Affiliation:
p.wang@liverpool.ac.uk, University of Liverpool, Engineering, United Kingdom
Anthony C. Jones
Affiliation:
tjconsultancy@btconnect.com, Epichem Ltd, United Kingdom
Timothy C.Q. Noakes
Affiliation:
t.c.q.noakes@dl.ac.uk, CCLRC Daresbury Laboratory, MEIS Facility, United Kingdom
Paul Bailey
Affiliation:
p.bailey@dl.ac.uk, CCLRC Daresbury Laboratory, MEIS Facility, United Kingdom
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Abstract

The synthesis of SrBi2Ta2O9 (SBT) thin films has been investigated using a superlattice approach. Thin films were deposited on silicon by independent injection of each source to produce Bi2O3/SrTa2O6 superlattices. The effects of post-deposition annealing have been investigated using high-resolution TEM and medium energy ion scattering (MEIS) to depth profile the superlattices. X-ray diffraction has also been used to characterize the conversion of the superlattices from distinct layers of Bi2O3 and SrTa2O6 into a polycrystalline layer of strontium bismuth tantalate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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