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Sulfurized Passivation of GaAs (100) Surfaces

Published online by Cambridge University Press:  22 February 2011

Z. S. Li ,
X. Y. Hou ,
W. Z. Cai ,
W. Wang ,
M. Zhang ,
G. S. Dong ,
X. Jin  and
Xun Wang
Z. S. Li
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
X. Y. Hou
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
W. Z. Cai
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
W. Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
M. Zhang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
G. S. Dong
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
X. Jin
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, China
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Abstract

We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photoluminescence (PL) spectrum of such anodic sulfurized GaAs surface shows big intensity enhancement as compared with that of as-etched GaAs samples; No visual intensity decay occurs under laser beam illumination, which maintains for more than seven months. The structure and composition of the passivation layers are investigated by the X-ray photoelectron spectroscopy and the mechanism of the layer formation is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 607
Copyright
Copyright © Materials Research Society 1993

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References

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