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Subtleties of Capacitance Transients in Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

Richard S. Crandall  and
Klaus Lips
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Klaus Lips
Affiliation:
Hahn-Meitner-Institut Berlin, D-12489 Berlin, Germany
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Abstract

Using junction capacitance methods, we describe the effect of contacts on charge emission transients in n-type hydrogenated amorphous silicon. The results demonstrate some of the difficulties encountered in observing and interpreting anomalous temperature independent emission transients(“slow relaxation”).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 685
Copyright
Copyright © Materials Research Society 1996

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References

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