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Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  26 February 2011

E. P. Donovan ,
C. A. Carosella ,
K. S. Grabowski  and
W. D. Coleman
E. P. Donovan
Affiliation:
Naval Research Laboratory, Code 4671, Washington, DC
C. A. Carosella
Affiliation:
Naval Research Laboratory, Code 4671, Washington, DC
K. S. Grabowski
Affiliation:
Naval Research Laboratory, Code 4671, Washington, DC
W. D. Coleman
Affiliation:
Sachs Freeman Associates, Washington, DC.
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Abstract

Silicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 111
Copyright
Copyright © Materials Research Society 1991

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