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Substrate Dependence of Electrical Properties of Contacts on p-InP

Published online by Cambridge University Press:  25 February 2011

Moon-Ho Park ,
C.L. Yeh ,
L.C. Wang ,
F. Deng ,
Q. Z. Liu ,
A.R. Clawson  and
S. S. Lau
Moon-Ho Park
Affiliation:
Electrical Engineering Department, Texas A&M University, College Station, TX 77843
C.L. Yeh
Affiliation:
Electrical Engineering Department, Texas A&M University, College Station, TX 77843
L.C. Wang
Affiliation:
Electrical Engineering Department, Texas A&M University, College Station, TX 77843
F. Deng
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093
Q. Z. Liu
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093
A.R. Clawson
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093
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Abstract

Pd and Ni contacts on various p-InP substrates which were grown by liquid-encapsulation Czochralski (LEC) and metal organic chemical vapor deposition (MOCVD) were investigated. Pd contacts on the substrates supplied by one manufacturer were found to be ohmic contacts with a minimum contact resistivity of ∼ 5xl0-5Ω-cm2 for annealing temperature between 420°C and 500°C. However, ohmic behavior was not observed for Pd contacts on other substrates. Hall measurement and double-crystal x-ray diffractometer were used to evaluate the substrates. It was speculated that existence of intrinsic defects in p-InP grown by LEC method may be responsible for the observed ohmic behavior. This defect-assisted tunneling mechanism is potentially usefully for making ohmic contacts on other compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 375
Copyright
Copyright © Materials Research Society 1994

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References

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