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Sub-Nanosecond Detection of Heavy Ions Using Single-Crystal, Natural Type IIA Diamond

Published online by Cambridge University Press:  21 February 2011

Sung Han ,
Stanley G. Prussin ,
Lawrence S. Pan ,
Stephen M. Lane ,
Don R. Kania ,
Ronald S. Wagner  and
Caleb R. Evans
Sung Han
Affiliation:
Department of Nuclear Engineering, University of California, Berkeley, Berkeley, CA 94720
Stanley G. Prussin
Affiliation:
Department of Nuclear Engineering, University of California, Berkeley, Berkeley, CA 94720
Lawrence S. Pan
Affiliation:
Laser Program of Lawrence Livermore National Laboratory, L-474, Livermore, CA 94550
Stephen M. Lane
Affiliation:
Laser Program of Lawrence Livermore National Laboratory, L-474, Livermore, CA 94550
Don R. Kania
Affiliation:
Crystallume, 125 Constitution Drive, Menlo Park, CA 94025
Ronald S. Wagner
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
Caleb R. Evans
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

The sub-nanosecond electrical transients induced by 5-MeV He+ and 10-MeV Si3+ ions have been measured in single-crystal, natural type Ila diamonds. The detectors were fabricated into conductivity modulated devices and were incorporated into 50-Ω high bandwidth transmission line structures. The electrical signals were recorded with a system based on a 70 GHz random sampling oscilloscope with the total recording rise time of 18.6 ±:0.6 ps.

Signal rise times are less than 70 ps and fall times are less than 200 ps for electric fields in the range 3.8x104 - 1×105 V/cm. The plasma time appears to play a key role in defining the initial stages of the charge transport because signal rise times are much greater than the recording system rise time, especially with the Si-ion excitation. Furthermore, incomplete charge collection is quite severe even at the highest applied electric fields due to the dominance of carrier trapping/recombination at the defect sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 305
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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