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Sub-Micron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation

Published online by Cambridge University Press:  25 February 2011

A. J. Steckl ,
J. Xu ,
H. C. Mogul  and
S. Mogren
A. J. Steckl
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221–0030
J. Xu
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221–0030
H. C. Mogul
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221–0030
S. Mogren
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221–0030
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Abstract

The effect of Si doping on the formation of stain-etched porous Si and its photoluminescent properties was studied. Porous Si is obtained by purely chemical etching of crystalline Si in a solution of HF:HNO3:H2O in the ratio of 1:3:5. We have observed that an incubation time (ti) exists between the insertion of Si into the solution and the onset of porous Si production. This incubation time was found to be a strong function of hole concentration in both n- and p-Si. In p-Si, the ti decreased rapidly with increasing conductivity, whereas for n-Si the opposite (but not as pronounced) trend was found to be the case. For example in (B-doped) p-Si, ti, is only ∼0.5 min for 250 (Ω-cm)−1 but increases to ∼ 5 min for 0.2 (Ω-cm)−1. In (P-doped) n-Si substrates ti was ∼ 8 min for 0.2 (Ω-cm)−1 increasing to ∼ 10 min for 7 (Ω-cm)−1. Photoluminescence (PL) measurements of the porous Si obtained on substrates of various conductivity (p and n) show similar spectra, namely a peak at around 1.94 eV with a full width at half-maximum (FWHM) of about 0.5 eV. Based on the ti difference, we have fabricated localized photoemitting porous Si patterns by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam (BB) implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, sub-micron photoemitting patterns have been obtained for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 519
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Papers contained in “Light Emission from Si”, Mat. Res. Soc. Symp. Proc. 256, Iyer, S.S., Collins, R. T. and Canham, L. T., eds. (Dec. 1991).Google Scholar
3. Steckl, A. J., Xu, J. and Mogul, H. C. (to be published)Google Scholar
4. Steckl, A. J., Mogul, H. C. and Mogren, S., Appl. Phys. Lett. 60, 1833 (1992).Google Scholar
5. Fathauer, R. W., George, T., Ksendzov, A., and Vasquez, R. P., Appl. Phys. Lett. 60, 995 (1992).Google Scholar
6. Sarathy, J., Shih, S., Jung, K. H., Tsai, C., Li, K.-H., Kwong, D. L., Campbell, J. C., Yau, S-L., and Bard, A. J., Appl. Phys. Lett. 60, 1532 (1992).Google Scholar
7. Shih, S., Jung, K. H., Hsieh, T. Y., Sarathy, J., Campbell, J. C., and Kwong, D. L., Appl. Phys. Lett. 60, 1863 (1992).Google Scholar
8. Turner, D. R., J. Electrochem. Soc. 107, 810 (1960).Google Scholar
9. Nakagawa, k., Nishida, A., Shimada, T., Yamaguchi, H., and Eguchi, K., Jap. Appl. Phys. 31, L515 (1992)Google Scholar
10. Doan, V. V. and Sailor, M. J., Appl. Phys. Lett. 60, 619 (1992).Google Scholar