Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T17:55:55.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Traps in GaN by Thermally-Stimulated Current

Published online by Cambridge University Press:  10 February 2011

Rong Zhang ,
Zhenchun Huang ,
J. C. Chen ,
Youdou Zheng  and
T. F. Kuech
Rong Zhang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228 Department of Chemical Engineering & Materials Science Program, University of Wisconsin - Madison, Madison, WI 53706
Zhenchun Huang
Affiliation:
NASA Goddard Space Flight Center, code 718, Greenbelt, MD 20771
J. C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
Youdou Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
T. F. Kuech
Affiliation:
Department of Chemical Engineering & Materials Science Program, University of Wisconsin - Madison, Madison, WI 53706
Get access

Abstract

In this paper we employed the TSC method to investigate the traps in GaN. The measured sample was a M-S-M UV-detector of high-resistance GaN on sapphire grown by LP-MOCVD. The relation of dark conductance to temperature clearly showed three major donor levels at 0.019, 0.13 and 0.74eV respectively. TSC measurements from 60 to 380K indicated that there were at least 11 traps in the GaN material. The active energy of those traps were 0.15, 0.19, 0.25, 0.28, 0.33, 0.39, 0.47, 0.55, 0.60, 0.63 and 0.67eV. The range of trap density is from 6 × l014cm-3 to 2 × l018cm-3. By comparing TSC spectrum to dark current, we consider there are at least 4 hole traps in the measured range with energy of 0.25, 0.28, 0.33 and 0.39eV. The illumination time effect was studied and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 633
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Asif Khan, M., Kuznia, J.N., Olson, D.T., Van Hove, J.M., Blasingame, M., Reitz, L.F., Appl. Phys. Lett., 60(23), p2917 (1992)Google Scholar
2. Walker, D., Zhang, X., Kung, P., Saxler, A., Javadpour, S., Xu, J., Razeghi, M., Appl. Phys. Lett., 68(15), p2100(1996)Google Scholar
3. Huang, Z.C., Chen, J.C., Mott, B.D., Mater. Res. Soc. Symp. Proc. 395Google Scholar
4. Qiu, C.H., Hoggatt, C., Molton, W., Leksono, M.W., Pankove, J.I., Appl. Phys. Lett., 66(20), p. 2712(1995)Google Scholar
5. Zhang, Rong, Huang, Z.C., Guo, Bo, Chen, J.C., Yan, Li, Zheng, Youdou, Kuech, T.F., these proceedings.Google Scholar
6. Zolper, J.C., Magerott Crawford, M., Howard, A.J., Ramer, J., Hersee, S.D., Appl. Phys. Lett., 68(2), p.200(1996)Google Scholar
7. Look, D.C., Fang, Z.Q., Kim, W., Aktas, O., Botchkarev, A., Salvador, A., Morkoc, H., Appl. Phys. Lett., 68(26), p3775(1996).Google Scholar