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A Study of the Factors Which Determine the Modulation Speed of a Shallow PN Junction Porous Silicon Led
Published online by Cambridge University Press: 15 February 2011
Abstract
The effect of the chemical thinning of the porous silicon structure on the speed and efficiency of electroluminescent devices, produced by the anodisation of a pn junction in bulk silicon is investigated. Thinning of the silicon wires results in an increase in the efficiency but at the expense of a reduction in operating speed. It is demonstrated that the operating speed is limited by the photoluminescence lifetime for small signal excitation. However, for large signals, the electroluminescence can be turned off more than 5 times faster than the photoluminescence lifetime, indicating that this need not necessarily limit device operating speed.
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- Copyright © Materials Research Society 1997
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