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Study of Short-Range Motion of Atomic Hydrogen in Amorphous Silicon by Neutron Reflectometry

Published online by Cambridge University Press:  21 February 2011

W. D. Dozier ,
K. W. Herwig ,
R. Shinar ,
H. Jia  and
J. Shinar
W. D. Dozier
Affiliation:
Ar gonne National Laboratory, Ar gonne, IL 60439
K. W. Herwig
Affiliation:
University of Missouri Research Reactor Facility, Columbia, MO 65211
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
H. Jia
Affiliation:
Ames Laboratory-USDOE and Physics and Astronomy Department, Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory-USDOE and Physics and Astronomy Department, Iowa State University, Ames, IA 50011
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Abstract

Preliminary results of neutron reflectometry (NR) measurements on if sputter-deposited a-Si:H/a-Si:D bilayers indicate that this technique may be used to monitor H and D motions over distances of ≈ 10 to 200 Å with a nominal resolution of 5 – 10 Å. In studying rf sputter-deposited thin films containing a high density of microvoids annealed at 270 C, we found that the hydrogen diffused a distance of only ≈ 100 Å. Further annealing at 270 and 280 C produced no additional motion. This result is consistent with a model of this system in which the hydrogen is trapped in microvoids after moving a relatively short distance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 401
Copyright
Copyright © Materials Research Society 1992

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References

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