Hostname: page-component-7c8c6479df-5xszh Total loading time: 0 Render date: 2024-03-18T01:24:00.976Z Has data issue: false hasContentIssue false

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

Published online by Cambridge University Press:  31 January 2011

Yongkun Sin
Affiliation:
yongkun.sin@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Nathan Presser
Affiliation:
nathan.presser@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Neil Ives
Affiliation:
neil.ives@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Steven C. Moss
Affiliation:
steven.c.moss@aero.org, The Aerospace Corporation, Electronics and Photonics Lab., El Segundo, California, United States
Get access

Abstract

Degradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Rossin, V., Zucker, E., Peters, M., Everett, M., and Acklin, B., “High-power high-efficiency 910-980nm broad area laser diodes,” Proc. SPIE 5336, pp.196202, 2004.10.1117/12.528452Google Scholar
[2] Schmidt, B., Sverdlov, B., Pawlik, S., Lichtenstein, N., Müller, J., Valk, B., Baettig, R., Mayer, B., and Harder, C., “9xx high-power broad area laser diodes,” Proc. SPIE 5711, pp. 201208, 2005.10.1117/12.601455Google Scholar
[3] Sin, Y., Presser, N., Foran, B., and Moss, S. C., “Investigation of catastrophic degradation in high power multi-mode InGaAs strained quantum well single emitters”, Proc. SPIE 6876, High Power Diode Laser Technology & Applications VI, p.68760R–1 , 2008.Google Scholar
[4] Henry, C. H., Petroff, P. M., Logan, R. A., and Merritt, F. R., “Catastrophic damage of AlxGa1-xAs double-heterostructure laser material,” J. Appl. Phys. 50, pp. 37213732, 1979.10.1063/1.326278Google Scholar
[5] Gity, F., Ahmadi, V., and Noshiravani, M., “Numerical analysis of void-induced thermal effects on GaAs/AlxGa1-xAs high power single-quantum-well laser diodes,”Solid State Electron. 50, pp. 17671773, 2006.10.1016/j.sse.2006.09.012Google Scholar
[6] Kimerling, L. C., “Recombination enhanced defect reactions,” Solid State Electron. 38, pp. 13911401, 1978.10.1016/0038-1101(78)90215-0Google Scholar