Amorphous silicon films were transformed into large-grain polycrystalline silicon films by excimer laser induced rapid melting and solidification. Growth is seeded by residual unmolten silicon left in a grid of holes made in the underlying silicon oxide layer. Growth thus starts with a vertical growth phase, during which occlusion of grains occurs, ideally filtering out only a single grain that subsequently seeds the lateral growth. Yield was increased by sharpening the edges of the hole to improve the filtering mechanism and very uniform polycrystalline layers were obtained. Furthermore, simulations were performed to analyze parameters such as growth velocity and melt depth. It was found that heat from laser light absorbed in the neighborhood of the hole strongly contributes to melt depth and thus to the filtering mechanism. Substrate heating or longer pulse durations can be utilized to ensure the occlusion of grains during vertical growth, to reduce thermal stresses, and to increase grain size to a value sufficient for single crystal thin-film transistors.