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A Study of Conformal GaAs on Si Layers by Micro-Raman and Spectral Imaging Cathodoluminescence

Published online by Cambridge University Press:  01 February 2011

Oscar Martínez
Affiliation:
oscar@fmc.uva.es, Universidad de Valladolid, Física de la Materia Condensada, Paseo de Belen 1,, Edificio de I+D, Valladolid, 47011, Spain
Luis Felipe Sanz
Affiliation:
lfsanz@eis.uva.es, Universidad de Valladolid, Física de la Materia Condensada, Paseo de Belen 1,, Edificio I+D, Valladolid, 47011, Spain
Juan Jiménez
Affiliation:
jimenez@fmc.uva.es, Universidad de Valladolid, Física Materia Condensada, Paseo de Belen 1, Edificio de I+D, Valladolid, 47011, Spain
Bruno Gérard
Affiliation:
bruno.gerard@3-5lab.fr, THALES, Corporate Research Laboratory, Orsay Cedex, 91404, France
Evelyn Gil-Lafon
Affiliation:
lafon@lasmea.univ-bpclermont.fr, LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, Aubiére Cedes, 63177, France
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Abstract

Spectral imaging cathodoluminescence and micro-Raman spectroscopy studies of GaAs layers grown on Si substrates by the conformal method allow to reveal a great variety of physical features of the layers, such as the complete stress distribution, self-doping effects, or the incorporation of dopants. We present herein the characterization of GaAs conformal layers grown by hydride vapor phase epitaxy, where the main issues concerning the distribution of defects and stresses are revealed. Also, intentionally doped layers were analyzed, revealing the main aspects of the incorporation of dopant impurities during growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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