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Structure of Sulphur-Passivated InP(100)-(1×1) Surface

Published online by Cambridge University Press:  25 February 2011

Z.H. Lu ,
Y. Tao ,
B.X. Yang ,
X.H. Feng ,
D.F. Mitchell ,
A. Yelon ,
M.J. Graham  and
E. Sacher
Z.H. Lu
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
Y. Tao
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
B.X. Yang
Affiliation:
CARS, University of Chicago, Chicago, IL60637, USA
X.H. Feng
Affiliation:
Dept. Chem., University of Western Ontario, London, CanadaN6A 5B7
D.F. Mitchell
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
A. Yelon
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
M.J. Graham
Affiliation:
Inst. for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6
E. Sacher
Affiliation:
Dept. of Eng. Phys., Ecole Polytechnique, Montreal, CanadaH3C 3A7
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Abstract

X-ray photoelectron spectroscopy, X-ray photoelectron diffraction, and S K edge X-ray absorption near-edge structure were used to characterize the air-stable S-passivated InP(100)-(lxl) surface prepared in (NH4)2S solution. The results show that one monolayer of sulphur which is bonded only to In is adsorbed on the surface. The S is found to occupy bridge-bonded sites, and the orientation of the In-S bond is determined to be in the [011] azimuth, with an In-S-In bridge-bond angle of about 100°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 299
Copyright
Copyright © Materials Research Society 1992

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References

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