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Structure of Amorphous A12O3 Produced by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

C. J. Mchargue ,
P. S. Sklad ,
P. Angelini ,
C. W. White ,
J. C. Mccallum ,
A. Perez  and
G. Marest
C. J. Mchargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
P. Angelini
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
J. C. Mccallum
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
A. Perez
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118 USA
G. Marest
Affiliation:
Univeristy Claude Bernard-Lyon 1, Villeurbanne, France
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Abstract

The amorphous state can be produced in α-Al2O3 by ion beam induced displacements at 77 K or by displacements combined with chemical effects at room temperature. Progress toward understanding the amorphization process has been made from studies of the short-range order, electronic charge on implanted species, and the critical composition for amorphization. Results are presented for implantation of Al + O in the stoichiometric ratio, zirconium, iron, and tin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 505
Copyright
Copyright © Materials Research Society 1990

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References

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