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Structural Investigations of Laser-Crystallized Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

D. Toet ,
P.M. Smith ,
T.W. Sigmon ,
R. Qiu ,
T. Takehara ,
S. Sun ,
C.C. Tsai  and
W.R. Harshbarger
D. Toet
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-271, Livermore CA 94550 e-mail:toet1@llnl.gov
P.M. Smith
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-271, Livermore CA 94550
T.W. Sigmon
Affiliation:
Lawrence Livermore National Laboratory, 7000 East Ave., L-271, Livermore CA 94550
R. Qiu
Affiliation:
Applied Komatsu Technology, 3101 Scott Blvd., M/S 9155, Santa Clara, CA 95054
T. Takehara
Affiliation:
Applied Komatsu Technology, 3101 Scott Blvd., M/S 9155, Santa Clara, CA 95054
S. Sun
Affiliation:
Applied Komatsu Technology, 3101 Scott Blvd., M/S 9155, Santa Clara, CA 95054
C.C. Tsai
Affiliation:
Applied Komatsu Technology, 3101 Scott Blvd., M/S 9155, Santa Clara, CA 95054
W.R. Harshbarger
Affiliation:
Applied Komatsu Technology, 3101 Scott Blvd., M/S 9155, Santa Clara, CA 95054
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Abstract

We investigated the structure of hydrogenated amorphous silicon, thin films crystallized by short pulses from a XeCl excimer laser at fluences for which total melting of the films occurs. Atomic force microscopy revealed that films prepared using optimized process conditions, leading to hydrogen contents ≤ 5 at.%, are smoother after laser crystallization than those prepared by laser-dehydrogenation. The roughness of the laser-crystallized films increases with their thickness, and can be reduced by multiple exposure. A better smoothing is obtained by partially remelting the films after the first irradiation. Transmission electron microscopy shows that the grains in the laser-crystallized films have sizes that are comparable to the film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 97
Copyright
Copyright © Materials Research Society 1998

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