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Structural and Optical Properties of the Thermally Stable Amorphous Si1−xBx Alloy.

Published online by Cambridge University Press:  01 January 1993

Johan R. A. Carlsson ,
X.H. Li ,
S.F. Gong  and
H.T.G. Hentzell
Johan R. A. Carlsson
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
X.H. Li
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
S.F. Gong
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H.T.G. Hentzell
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Thin amorphous Si1−xBx films were co-evaporated onto pre-oxidized (100) Si wafers and quartz substrates, by using a high vacuum system with 2 electron guns. Films were deposited in a composition range from x=0 to x=0.5. In order to study how the structural and optical properties depended on concentration and annealing temperature, heat treatments were carried out at temperatures from 400 up to 1000°C. The films were characterized by means of transmission electron microscopy (TEM), Auger electron spectroscopy (AES), and light absorption spectrophotometry. It is shown that the amorphous Si1−xBx alloy is stable up to 1000°C at certain compositions and that the optical band gap of the alloy increases gradually with increasing annealing temperature up to 700 - 900°C, and then increases rapidly when annealed at a higher temperature by about 0.5 eV. These changes can be associated with microstructural alterations. The relationship between the microstructure and the band gap of the films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 747
Copyright
Copyright © Materials Research Society 1993

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References

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