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Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure

Published online by Cambridge University Press:  10 February 2011

H. Amano ,
T. Takeuchi ,
S. Sota ,
H. Sakai  and
I. Akasaki
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
T. Takeuchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
S. Sota
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
H. Sakai
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan, amanb@meijo-u.ac.jp
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Abstract

Structural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1143
Copyright
Copyright © Materials Research Society 1997

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References

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