Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-18T01:38:09.957Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Optical Properties of Al2O3 with Si and Ge Nanocrystals

Published online by Cambridge University Press:  01 February 2011

Selcuk Yerci ,
Ilker Yildiz ,
Ayse Seyhan ,
Mustafa Kulakci ,
Ugur Serincan ,
Michael Shandalov ,
Yuval Golan  and
Rasit Turan
Selcuk Yerci
Affiliation:
syerci@metu.edu.tr, Middle East Technical University, Physics, Fizik Bolumu Z-29, ODTU, Ankara, 06531, Turkey, 0090 312 210 4314, 0090 312 210 5099
Ilker Yildiz
Affiliation:
iyildiz@metu.edu.tr, Middle East Technical University, Department of Physics, Ankara, 06531, Turkey
Ayse Seyhan
Affiliation:
aseyhan@metu.edu.tr, Middle East Technical University, Department of Physics, Ankara, 06531, Turkey
Mustafa Kulakci
Affiliation:
e110665@metu.edu.tr, Middle East Technical University, Department of Physics, Ankara, 06531, Turkey
Ugur Serincan
Affiliation:
userincan@anadolu.edu.tr, Anadolu University, Department of Physics, Eskisehir, 26470, Turkey
Michael Shandalov
Affiliation:
michash@bgu.ac.il, Ben-Gurion University of the Negev, Department of Materials Engineering, Beer-Sheva, 84105, Israel
Yuval Golan
Affiliation:
ygolan@bgu.ac.il, Ben-Gurion University of the Negev, Department of Materials Engineering, Beer-Sheva, 84105, Israel
Rasit Turan
Affiliation:
turanr@metu.edu.tr, Middle East Technical University, Department of Physics, Ankara, 06531, Turkey
Get access

Abstract

Si and Ge nanocrystals were formed in alumina matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si0 signals corresponding to Si nanoclusters increases while Si4+ signals related to a-SiO2 disappears from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compressive stress exerted on the formed nanocrystals were also studied by Raman spectroscopy. Photoluminescence spectra of the Al2O3 containing nanocrystals were discussed by means of Ti and Cr impurities, as well as F centers. The existence of the amorphous Ge nanoclusters in alumina matrix significantly enhances the light emission of Ti3+ impurities.

Keywords

ion-implantationnanostructureoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L07-06
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Silicon Photonics, edited by Pavesi, L. and Lockwood, D., Topics in Applied Physics vol. 94 (Springer-Verlag, Berlin 2004).Google Scholar
3. Walters, R. J., Bourianoff, G. I., Atwater, H., Nature Mater. 4 143 (2005).Google Scholar
4. Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, A., Delarue, C., Phys. Rev. Lett. 82, 197, (1999).Google Scholar
5. Tetelbaum, D. I., Gorshkov, O. N., Ershov, A. V., Kasatkin, A. P., Kamin, V. A., Mikhaylov, A. N., Belov, A. I., Gaponova, D. M., Pavesi, L., Ferraioli, L., Finstad, T. G., and Foss, S., Thin Solid Films 515, 333 (2006).Google Scholar
6. Heitmann, J., Müller, F., Zacharias, M., and Gösele, U., Adv. Mater. 17, 795 (2005).Google Scholar
7. Ray, S. K., Mahapatra, R., Maikap, S., J. Mater. Sci: Mater. Electron. 17, 689 (2006).Google Scholar
8. Yerci, S., Serincan, U., Dogan, I., Tokay, S., Genisel, M., Aydinli, A., Turan, R., J. Appl. Phys. 100, 074301 (2006).Google Scholar
9. Kwok, R. W. M., (www.phy.cuhk.edu.hk/∼surface/XPSPEAK/).Google Scholar
10. Liu, Y., Chen, T. P., Fu, Y. Q., Tse, M. S., Hsieh, J. H., Ho, P. F. and Liu, Y. C., J. Phys. D: Appl. Phys. 36, L97 (2003).Google Scholar
11. Yerci, S., Kulakci, M., Serincan, U., Shandalov, M., Golan, Y. and Turan, R., J. Nanosci. Nanotechnol., in press.Google Scholar
12. Lee, B. H., Oh, J., Tseng, H. H., Jammy, R., Huff, H., Materials Today, 9, 32 (2006).Google Scholar
13. Imakita, K., Fujii, M. and Hayashi, S., Phys. Rev. B 71 193301 (2005).Google Scholar