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Structural and Leakage Current Behavior of Bi4Ti3O12 Thin Films on La0–5Sr0–5jCoO3 Bottom Electrodes Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

William Jo ,
K.H. Kim ,
T.W. Noh ,
S.D. Kwon ,
B.D. Choe  and
B.D. You
William Jo
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
K.H. Kim
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
T.W. Noh
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
S.D. Kwon
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
B.D. Choe
Affiliation:
Department of Physics, Seoul National University, Seoul, 151–742, Korea
B.D. You
Affiliation:
ATRC, Agency for Defense Development, Taejon, Korea
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Abstract

Using La0.5Sro.5CoO3 bottom electrode layers, Bi4Ti3O12 thin films were grown on LaAlO3(001), Al2O3(0001), and Si(001) substrates. Crystalline orientation of the Bi4Ti3O12 thin films was examined by x-ray diffraction techniques. The cross-sectional microstructures of Bi4Ti3O12/La0.5Sr0.5CoO3 heterostructures are investigated. It is found that the crystalline orientation and the microstructure affect leakage current behavior of the Bi4Ti3O12 layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 33
Copyright
Copyright © Materials Research Society 1995

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References

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