Hostname: page-component-7c8c6479df-94d59 Total loading time: 0 Render date: 2024-03-19T05:55:45.512Z Has data issue: false hasContentIssue false

Structural and Electro-Optic Properties of Laser-Ablated Ferroelectric Bi4Ti3O12 Thin Films

Published online by Cambridge University Press:  01 January 1992

William Jo
Affiliation:
Department of Physics, Seoul National University, 151–742, Seoul, Korea
Hag-Ju Cho
Affiliation:
Department of Physics, Seoul National University, 151–742, Seoul, Korea
Tae Won Noh
Affiliation:
Department of Physics, Seoul National University, 151–742, Seoul, Korea
Yun Seok Cho
Affiliation:
Department of Physics, Seoul National University, 151–742, Seoul, Korea
Suk-Il Kwun
Affiliation:
Department of Physics, Seoul National University, 151–742, Seoul, Korea
Get access

Abstract

Ferroelectric Bi4Ti3O12 thin films have been deposited using second harmonics of a Q-switched Nd:YAG laser. Various single crystal substrates, including SrTiO3(100), SrTiO3(110). MgO(100), and MgO(110), were used. Structural and electro-optic properties of the films were investigated using XRD, x-ray pole figure, and linear birefringence measurements. It is found that substrate kinds and their surface orientations are important growth parameters which determine crystal axis orientation and electro-optic properties of the Bi4Ti3O12 thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ramesh, R., Luther, K., Wilkens, B., Hart, D. L., Wang, E., Tarascon, J. M., Inam, A., Wu, X. D., and Venkatesan, T., Appl. Phys. Lett. 57, 1505 (1990).Google Scholar
2. Buhay, H., Sinharoy, S., Kasner, W. H., Francombe, M. H., Lampe, D. R., and Stepke, E., Appl. Phys. Lett. 58, 1470 (1991).Google Scholar
3. Ramesh, R., Inam, A., Wilkens, B., Chan, W. K., Sands, T., Fork, D. K., Geballe, T. H., Evans, J., and Bullington, J., Appl. Phys. Lett. 59, 1782 (1991).Google Scholar
4. Jo, W., Yi, G-C., Noh, T. W., Ko, D-K., Cho, Y. S., and Kwun, S-I., Appl. Phys. Lett. 61, 1526 (1992).Google Scholar
5. Sugibuchi, K., Kurogi, Y., and Endo, N., J. Appl. Phys. 46, 2877 (1975).Google Scholar
6. Wu, S. Y., Takei, W. J., and Francombe, M. H., Appl. Phys. Lett. 22, 26 (1973).Google Scholar
7. Graettinger, T. M., Rou, S. H., Ameen, M. S., Auciello, O., and Kingon, A. I., Appl. Phys. Lett. 58, 1964 (1991).Google Scholar
8. Wu, A. Y., Wang, F., Juang, C.-B., and , C. Bustamante in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Proc. 200, Pittsburgh, PA, 1990), pp. 261266.Google Scholar
9. Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., J. Appl. Phys. 60, 736 (1986).Google Scholar