Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-17T04:59:29.655Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Mg–Si Thin Films Fabricated by Radio-Frequency Magnetron Sputtering Deposition

Published online by Cambridge University Press:  29 November 2012

Jun-ichi Tani  and
Hiroyasu Kido
Jun-ichi Tani
Affiliation:
Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya Joto-ku Osaka 536-8553, Japan
Hiroyasu Kido
Affiliation:
Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya Joto-ku Osaka 536-8553, Japan
Get access

Abstract

Mg–Si thin films were fabricated on glass, Si(100), Si(111), and polycrystalline Al2O3 substrates by radio-frequency (RF) magnetron sputtering deposition using an elemental composite target composed of Si chips on a Mg disk. The effect of deposition conditions such as the composition ratio of Mg/Si in the target area, substrate temperature, and the type of substrate on the thin film deposition was investigated. By controlling the deposition conditions, pure-phase Mg2Si polycrystalline films were successfully fabricated at room temperature. The crystalline orientation of the films was strongly influenced by the Mg/Si elemental composition ratio in the targets as well as by the surface roughness and porosity of the substrate. The electron concentration and mobility of nondoped Mg2Si films were 2.2 × 1016 cm-3 and 2.0 cm2/Vs, respectively. The electron concentration of Mg2Si films was drastically increased by impurity doping with Al and Bi.

Keywords

thermoelectricthin filmsputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1490: Symposium B – Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration , 2013 , pp. 229 - 234
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Morris, R. G., Redin, R. D., and Danielson, G. C., Phys. Rev. 109, 1909 (1958).CrossRefGoogle Scholar
Stella, A., and Lynch, D. W., J. Phys. Chem. Solids 25, 1253 (1964).CrossRefGoogle Scholar
Scouler, W. J., Phys. Rev. 178, 1353 (1969).CrossRefGoogle Scholar
Vining, C. B. in CRC Handbook of Thermoelectrics, edited by Rowe, D. M. (CRC Press, Boca Raton, 1995) pp. 277–285.Google Scholar
Zaitsev, V. K., Fedorov, M. I., Eremin, I. S., and Gurieva, E. A. in Thermoelectrics Handbook Macro to Nano, edited by Rowe, D. M. (CRC Press, Boca Raton, 2006) Chapter 29.Google Scholar
Vantomme, A., Mahan, J. E., Langouche, G., Becker, J. P., Bael, M. V., Temst, K., and Haesendonck, C. V., Appl. Phys. Lett. 70, 1086 (1997).CrossRefGoogle Scholar
Hasapis, T. C., Stefanaki, E. C., Siozios, A., Hatzikraniotis, E., Vourlias, G., Patsalas, P., and Paraskevopoulos, K. M. in Energy Harvesting–Recent Advances in Materials, Devices and Applications, edited by Venkatasubramanian, R., Radousky, H. B., and Liang, H., (Mater. Res. Soc. Proc. 1325, Cambridge University Press, New York, 2011) pp. 23–28.Google Scholar
Xiao, Q., Xie, Q., Zhao, K., Yu, Z., and Zhao, K., Phys. Procedia 11, 130 (2011).CrossRefGoogle Scholar
Yamaguchi, T., Kondoh, K., Sekikawa, T., Henmi, M., and Oginuma, H., J. Jpn. Powder Powder Metal. 52, 276 (2005).CrossRefGoogle Scholar
Kato, T., Sago, Y., and Fujiwara, H., J. Appl. Phys. 110, 063723 (2011).CrossRefGoogle Scholar
Klug, H. P., and Alexander, L. E., X-Ray Diffraction Methods for Polycrystalline and Amorphous Materials, (Wiley & Sons, New York, 1974).Google Scholar
Tani, J., Takahashi, M., and Kido, H., J. Alloys. Compd., 488, 346 (2009).CrossRefGoogle Scholar
Lyon, K. G., Salinger, G. L., Swenson, C. A., and White, G. K., J. Appl. Phys. 48, 865 (1977).CrossRefGoogle Scholar
Technical data sheet of Matsunami Glass Ind., Ltd.Google Scholar
Tani, J., and Kido, H., Physica B 364, 218 (2005).CrossRefGoogle Scholar