Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-25T00:40:34.976Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Properties of Ba0.5Sr0.5TiO3 Thin Films for Tunable Microwave Applications

Published online by Cambridge University Press:  17 March 2011

Sriraj G. Manavalan ,
Ashok Kumar ,
T. Weller  and
A.K. Sikder
Sriraj G. Manavalan
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33620 Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, FL 33620
Ashok Kumar
Affiliation:
Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, FL 33620 Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620
T. Weller
Affiliation:
Department of Electrical Engineering, University of South Florida, Tampa, FL 33620
A.K. Sikder
Affiliation:
Nanomaterials and Nanomanufacturing Research Center, University of South Florida, Tampa, FL 33620
Get access

Abstract

The primary objective of this research is to optimize the different deposition conditions to obtain high tunability and low dielectric loss of Barium Strontium Titanate (BST) thin films at microwave frequencies. Ba0.5Sr0.5TiO3thin films were deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique (PLD). Deposition conditions like temperature, oxygen pressure, substrate to target distance and laser energy are varied to obtain the objective. Deposition of the BST thin films on the Pt/TiO2/SiO2/Si substrates was carried out at temperatures of 450°°C, 550°°C, 650°°C and oxygen pressures of 250mTorr and 450mTorr with laser fluence of 250 mJ/cm2 and 450mJ/cm2 at 10 pulses per second. The microstructural and phase analysis of the deposited BST films at different temperatures and different oxygen pressures were performed using X-ray diffraction (XRD) method. The diffraction patterns are attributed to cubic (perovskite) crystal system. Atomic force microscopy (AFM) was used to perform the surface analysis of the films deposited at different substrate to target distances, varied laser energies and oxygen pressures. The BST capacitor was fabricated using the Coplanar Waveguide Structure and the capacitance and dielectric constant were measured using the Vector Network Analyzer (VNA). Tunability of 3.1:1 and loss tangent of 0.0121 was achieved at 0.4 – 0.8 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E3.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Miranda, Félix A., Mueller, Carl H., Cubbage, Crystal D., Bhasin, Kul B., Singh, Rajiv K. and Harkness, Samuel D., IEEE Trans.Appl.Supercond. 5(2), 3191 (1995).Google Scholar
2. Abbas, F., Davis, L.E., and Gallop, J.C., IEEE Trans.Appl.Supercond. 5, 3511 (1995).Google Scholar
3. Sengupta, S., Sengupta, L. C., Vijay, D. P., and Desu, S. B., Integr. Ferroelect., 13, 239 (1996).Google Scholar
4. Ayguavives, F. T., Tombak, A., Maria, J. P., Stauf, G. T., Ragaglia, C., Roeder, J., Mortazawi, A., Kingon, A. I., Proceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics, 1, 365 (2000).Google Scholar
5. Padmini, P., Taylor, T.R., Lefevre, M.J., Nagra, A.S., York, R.A., and Speck, J.S., Appl.Phys.Lett. 75(20), 3186(1999).Google Scholar
6. Majumder, S.B., Jain, M., Martinez, A., Katiyar, R.S., F.Keuls, W. Van, and Miranda, F.A., J.Appl.Phys. 90(2), 896 (2001).Google Scholar
7. Kingon, A. I.; Auciello, O., “A critical review of physical vapor deposition techniques for the synthesis of ferroelectric thin film”, Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics, 320 (1992).Google Scholar
8. Chang, Wontae, Kirchoefer, Steven W., Pond, Jeffrey M., Horwitz, James S., Sengupta, Louise, J.Appl.Phys. 92 (3), 1528 (2002).Google Scholar
9. Jain, M., Majumder, S.B., Katiyar, R.S., Bhalla, A.S., Agrawal, D.C., Keuls, F.W. Van, Miranda, F.A., Romanofsky, R.R., Mueller, C.H., Mat.Res.Soc.Symp.Proc. 748, U17.4.1 (2003).Google Scholar
10. Lee, Su-Jae, Moon, Seung Eon, Ryu, Han-Cheol, Kwak, Min-Hwan, Kim, Young-Tae, and Han, Seok-Kil, Appl.Phys.Lett. 82(13), 2133 (2003).Google Scholar
11. Abe, K. and Komatsu, S., Jpn.J.Appl.Phys. 32, 4186 (1993).Google Scholar
12. Saha, Sanjib, Krupanidhi, S.B., Mat.Sci.Eng. B57, 135 (1999).Google Scholar
13. Fountzoulas, Costas G., Demaree, J.D. and McKnight, Steven H., Mat.Res.Soc.Symp.Proc. 656E, DD6.10.1 (2001).Google Scholar
14. Tombak, Ali, Maria, Jon Paul, Ayguavives, F. T., Jin, Z., Stauf, G. T., Kingon, A. I. and Morazawi, A., IEEE Microwave Wireless. Components Letters 12, 1 (2002)Google Scholar