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Stress-controlled phonon-impurity resonances in terahertz silicon lasers

Published online by Cambridge University Press:  31 January 2011

Sergey G. Pavlov
Sergey G. Pavlov*
Affiliation:
sergeij.pavlov@dlr.de
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Abstract

Optically pumped terahertz silicon lasers utilize transitions between shallow donor states at low lattice temperatures. Population inversion in these lasers is built-up due to selective relaxation routes of optically excited electrons into impurity ground state. Each relaxation step of the electron occurs under assistance of intervalley and intravalley phonons with energies approaching the particular energy gaps between interacting excited donor states. These impurity phonon interactions determine, at the end, the lifetimes of the laser levels, and, therefore, efficiency of intracenter silicon lasers. Deformation of silicon crystal is a classical example of controllable influence on energy spectrum of shallow donor levels due to specific splitting and shifts of conduction band valleys. Using moderate (up to 400 MPa) external uniaxial deformation of a crystal, one can radically modify the impurity spectra while the phononic spectra remain almost unchanged. We have demonstrated significant improvement of efficiency for intracenter silicon lasers followed by changes of lifetime for the upper and the lower laser levels due to moving the impurity levels either into or out of resonance with corresponding intervalley phonon frequencies.

Keywords

Silaserelectron-phonon interactions
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1221: Symposium CC – Phonon Engineering for Enhanced Materials Solutions–Theory and Applications , 2009 , 1221-CC09-02
Copyright
Copyright © Materials Research Society 2010

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