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Stress of Platinum Thin Films Deposited by Dc Magnetron Sputtering Using Argon/Oxygen Gas Mixture

Published online by Cambridge University Press:  10 February 2011

Min Hong Kim ,
Tae-Soon Park ,
Dong-Su Lee ,
Yong Eui Lee ,
Dong-Yeon Park ,
Hyun-Jung Woo ,
Dong-Il Chun ,
Euijoon Yoon  and
Jowoong Ha
Min Hong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Tae-Soon Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Su Lee
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Kyungki 449-910, Korea
Yong Eui Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Dong-Yeon Park
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Kyungki 449-910, Korea
Hyun-Jung Woo
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Kyungki 449-910, Korea
Dong-Il Chun
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Kyungki 449-910, Korea
Euijoon Yoon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jowoong Ha
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Kyungki 449-910, Korea
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Abstract

Pt thin films were deposited by a DC magnetron sputtering with Ar/O2 gas mixtures. Due to the oxygen incorporation into the Pt films, deposition rate and resistivity of as-deposited Pt thin films increased with oxygen fraction in the sputtering gas. No peaks from crystalline Pt oxides were observed by x-ray diffraction (XRD) and excessive oxygen incorporation into Pt lead to an amorphous Pt oxide formation. More oxygen could be incorporated in the Pt thin films deposited at lower temperatures and at higher total pressures. Incorporated oxygen was completely removed after an annealing at 800 °C for an hour in air ambient, as the resistivity of the Pt thin films recovered their bulk resistivity values. Tensile stress of the Pt films decreased with oxygen incorporation, and approached a saturation level at high resistivity of the films, presumably due to the formation of amorphous Pt oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 427
Copyright
Copyright © Materials Research Society 1997

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