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Stress Limited Scaling of Ge2Sb2Te5

Published online by Cambridge University Press:  01 February 2011

Robert Edward Simpson ,
Milos Krbal ,
Paul Fons ,
Alex Kolobov ,
Tomoya Uruga ,
Hajime Tanida  and
Junji Tominaga
Robert Edward Simpson
Affiliation:
robert.simpson@aist.go.jp, National Institute for Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Japan
Milos Krbal
Affiliation:
milos.krbal@aist.go.jp, National Institute for Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Ibaraki, Japan
Paul Fons
Affiliation:
paul-fons@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Tsukuba, Japan
Alex Kolobov
Affiliation:
a.kolobov@aist.go.jp, United States
Tomoya Uruga
Affiliation:
Urugat@spring8.or.jp, JASRI, Spring-8, Japan
Hajime Tanida
Affiliation:
Tanida@spring8.or.jp, JASRI, Spring-8, Hyogo, Japan
Junji Tominaga
Affiliation:
j-tominaga@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Nanodevice Innovation Research Centre, Tsukuba, Japan
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Abstract

The influence of stress on the phase change behaviour of Ge2Sb2Te5 encapsulated by ZnS-SiO2 and TiN is investigated using temperature dependent Extended X-ray Asbsorption Fines Structure and Ellipsometry to determine the crystallisation temperature. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material's ability to change phase and can cause a profound increase in its crystallization temperature. We have experimentally shown that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.

Keywords

stress/strain relationshipcrystal growthextended x-ray absorption fine structure(EXAFS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H06-02
Copyright
Copyright © Materials Research Society 2010

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