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The Stress Change in Passivated Al Lines Due to the Reaction Between Ti and Al

Published online by Cambridge University Press:  10 February 2011

T. Marieb ,
A. Mack ,
J. Lee  and
M. Dibattista
T. Marieb
Affiliation:
Components Research, Intel Corporation, SC1-03, 3065 Bowers Ave., Santa Clara, CA 95052
A. Mack
Affiliation:
Components Research, Intel Corporation, SC1-03, 3065 Bowers Ave., Santa Clara, CA 95052
J. Lee
Affiliation:
Components Research, Intel Corporation, SC1-03, 3065 Bowers Ave., Santa Clara, CA 95052
M. Dibattista
Affiliation:
Dept. Of Chemical Engineering, University of Michigan, 3085 H.H. Dow Building, 2300 Hayward, Ann Arbor, M1 48109
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Abstract

The thin film reaction between Ti and Al-0.5%Cu to form TiAl3 is common in the microelectronics industry. In this paper the stress changes in Al-0.5%Cu films at elevated temperatures during the reaction are measured. The changes are measured in blanket films as well as in passivated interconnect lines. Results show that in blanket films the Al-0.5%Cu does not experience any stress change due to the reaction. However in passivated lines, where the layers are not allowed to relax in the normal direction, tensile stresses build up in the Al-0.5%Cu due to the volume shrinkage that happens when these films react.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 213
Copyright
Copyright © Materials Research Society 1998

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References

1. Thuillard, M., Tran, L. T., Nieh, C. W., and Nicolet, M-A., J. Appl. Phys. 65 (1989)2553.10.1063/1.342780Google Scholar
2. Ball, R. K. and Todd, A. G., Thin Solid Films, 149 p. 269 (1987).Google Scholar
3. Krafcsik, I., Gyulai, J., Palmstrom, C. J., and Mayer, J. W., Appl. Phys. Lett., 43 p.1015 (1983).10.1063/1.94212Google Scholar
4. Besser, P.R., Sanchez, J.E. Jr., Alvis, R., Mat. Res. Soc. Proc. Vol. 355, p. 631 (1995).10.1557/PROC-355-631Google Scholar
5. Brown, D.D., Besser, P.R., Sanchez, J.E. Jr., Korhonen, M.A., Li, C-Y, Mat. Res. Soc.. Proc., Vol. 356, p. 471 (1995).10.1557/PROC-356-471Google Scholar
6. Flinn, P.A., Waychunas, G. A., J. Vac. Sci. Tech. B 6 p. 1749 (1988).Google Scholar