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Strain Relaxation of Ion-implanted Strained Silicon on Relaxed SiGe

Published online by Cambridge University Press:  17 March 2011

R. T. Crosby ,
K. S. Jones ,
M. E. Law ,
A. F. Saavedra ,
J. L. Hansen ,
A. N. Larsen  and
J. Liu
A. F. Saavedra
Affiliation:
SWAMP Center, University of Florida, Gainesville, FL
A. N. Larsen
Affiliation:
Department of Physics and Astronomy, University of Aarhus, Aarhus, Denmark
J. Liu
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA
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Abstract

The relaxation processes of strained silicon films on silicon-rich relaxed SiGe alloys have been studied. Experimental structures were generated via Molecular Beam Epitaxial (MBE) growth techniques and contain a strained silicon capping layer of approximately 50 nm. The relaxed SiGe alloy compositions range from 0 to 30 atomic% germanium. Samples received two distinct types of silicon implants. A 12 keV Si+ implant at a dose of 1×1015 atoms/cm2 was used to generate an amorphous layer strictly confined within the strained Si cap. An alternate 60 keV Si+ implant at a dose of 1×1015 atoms/cm2 was employed to create a continuous amorphous layer extending from the sample surface to a position 50 nm into the bulk SiGe material. The strain relaxation and regrowth processes are quantified through High Resolution X-Ray Diffraction (HRXRD) rocking curves and Cross-sectional Transmission Electron Microscopy (XTEM). The role of injected silicon interstitials upon the strain relaxation processes at the Si/SiGe interface after annealing at 600°C is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C4.12
Copyright
Copyright © Materials Research Society 2004

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References

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